Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressed
OwnerToshitake Yaegashiinventor
Life of this patent
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Abstract
A first insulation film is formed on a semiconductor substrate. A first gate electrode is formed on the first insulation film. A second insulation film is formed on an upper surface and a side surface of the first gate electrode. A second gate electrode is formed on the second insulation film. The entirety of that part of the second gate electrode, which is located above the second insulation film formed on the upper surface of the first gate electrode, is a silicide layer. At least a portion of that part of the second gate electrode, which is located on the side surface of the first gate electrode, is a silicon layer.
Claims20
A nonvolatile semiconductor memory device comprising:
- a semiconductor substrate;
- a first insulation film formed on the semiconductor substrate;
- a first gate electrode formed on the first insulation film;
- a second insulation film formed on an upper surface and a side surface of the first gate electrode;
- and
- a second gate electrode formed on the second insulation film,
- wherein an entirety of a part of the second gate electrode, which is located above the second insulation film formed on the upper surface of the first gate electrode, is a silicide layer, and at least a portion of a part of the second gate electrode, which is located on the side surface of the first gate electrode, is a silicon layer.
A nonvolatile semiconductor memory device comprising:
- a semiconductor substrate;
- a memory cell including a first insulation film formed on the semiconductor substrate, a first gate electrode formed on the first insulation film, a second insulation film formed on an upper surface and a side surface of the first gate electrode, and a second gate electrode formed on the second insulation film;
- and
- a selection transistor including a third gate electrode formed on the semiconductor substrate via the first insulation film,
- wherein an entirety of a part of the second gate electrode, which is located above the second insulation film formed on the upper surface of the first gate electrode, is a silicide layer, and a part of the third gate electrode, which is in contact with the first insulation film, is a silicon layer.
A nonvolatile semiconductor memory device comprising:
- a semiconductor substrate;
- a memory cell including a first insulation film formed on the semiconductor substrate, a first gate electrode formed on the first insulation film, a second insulation film formed on an upper surface and a side surface of the first gate electrode, and a second gate electrode formed on the second insulation film;
- and
- a selection transistor including a third gate electrode formed on the semiconductor substrate via the first insulation film,
- wherein an entirety of a part of the second gate electrode, which is located above the second insulation film formed on the upper surface of the first gate electrode, is a silicide layer, and at least a portion of a part of the second gate electrode, which is located on the side surface of the first gate electrode, and a part of the third gate electrode, which is in contact with the first insulation film, are silicon layers.
Dependencies are inferred from the claim text.