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US 2007/0176218 A1Published application
Dual-gate non-volatile ferroelectric memory
AssigneeHynix Semiconductor Inc.
InventorHee-Bok Kang
Life of this patent
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Abstract
A dual-gate non-volatile memory cell includes a first dielectric layer extending over a first gate, a semiconductor region extending over the first dielectric layer, a second dielectric layer comprising tunnel oxide extending over the semiconductor region, a ferroelectric layer extending over the second dielectric layer, and a second gate extending over the ferroelectric layer.
Claims26
A non-volatile memory structure comprising:
- a first gate electrode comprising a conductive material;
- a first dielectric layer extending over the first gate electrode;
- a first semiconductor region extending over the first dielectric layer;
- a second dielectric layer extending over the first semiconductor region;
- a first ferroelectric layer extending over the second dielectric layer;
- and
- a second gate electrode comprising a conductive material extending over the first ferroelectric layer.
4 more elements
A method of forming a non-volatile memory structure, comprising:
- forming a first gate electrode comprising a conductive material over a dielectric material;
- forming a first dielectric layer extending over the first gate electrode;
- forming a first semiconductor region extending over the first dielectric layer;
- forming a second dielectric layer extending over the first semiconductor region;
- forming a first ferroelectric layer extending over the second dielectric layer;
- and
- forming a second gate electrode comprising a conductive material extending over the first ferroelectric layer.
4 more elements
A non-volatile memory comprising:
- a memory array having a plurality of strings of serially connected memory cells arranged along rows and columns, each memory cell comprising:
- a first gate comprising a conductive material forming part of a bottom wordline extending horizontally through the memory array;
- a first dielectric layer extending over the first gate;
- a semiconductor region extending over the gate dielectric layer;
- a second dielectric layer extending over the semiconductor region;
- a ferroelectric layer extending over the second dielectric layer;
- and
- a second gate comprising a conductive material extending over the ferroelectric layer, the second gate forming part of a top wordline extending parallel to the bottom wordline.
5 more elements
Dependencies are inferred from the claim text.