Plasma doping method and plasma doping apparatus

A silicon substrate with a diameter of 300 mm in which boron is introduced to a surface thereof by a plasma doping process using successive plasma containing the boron,

• wherein the introduced boron has such a profile that a depth at which a boron concentration is 5×10 18cm−3 is in the range of 7 to 15.5 nm,
• wherein the abruptness of the depth profile of boron is in the range of 1.5 to 3 nm/decade in a distance in which the boron concentration is lowered from 1×1019 cm−3 to 1×1018 cm−3;
• and
• wherein a standard deviation of a boron dose on surfaces of the silicon substrate other than a portion in 3 mm from the edge thereof is 2% or less.

A silicon substrate with a diameter of 300 mm in which a boron introduced layer is formed in a surface thereof by a plasma doping process using successive plasma containing boron,

• wherein the boron introducing layer is formed by generating plasma containing boron in a vacuum vessel having an inner wall on which a film containing boron is formed,
• wherein the introduced boron has such a profile that a depth at which a boron concentration is 5×1018 cm−3 is in the range of 7 to 15.5 nm, wherein a abruptness of the boron depth is in the range of 1.5 to 3 nm/decade in a distance in which the boron concentration is lowered from 1×1019 cm−3 to 1×1018 cm−3;
• and
• wherein a standard deviation of a boron dose on surfaces of the silicon substrate other than a portion is 3 mm from the edge thereof is 2% or less.

A plasma doping apparatus for forming an impurity introduced layer on a processing substrate, the plasma doping apparatus comprising:

• a vacuum vessel having an inner wall on which a film containing a first impurity is formed;
• a sample support which is surrounded by the inner wall of the vacuum vessel and on which the processing substrate is placed;
• a coil and antenna provided opposite to the sample support and serving as a plasma source;
• a first high-frequency power supply supplying a high frequency power to the coil and antenna;
• and
• a second high-frequency power supply providing a high-frequency power to the sample support,
• wherein a gas containing the first impurity are introduced into the vacuum vessel to generate successive plasma by the coil and antenna, the first high-frequency power supply, and the second high-frequency power supply.