US 2007/0175858 A1 · Methods for post-etch deposition of a dielectric film

Abstract

Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.

Claims27

Dependent claims

A method for post-etch deposition on a dielectric film, comprising:

(a) providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor;
(b) etching the low-k dielectric layer in the etch reactor;
and
(c) depositing a protection layer on the etched low-k dielectric layer, wherein the protection layer alters a surface property of the etched dielectric layer.

1 more element

Dependencies are inferred from the claim text.

Methods for post-etch deposition of a dielectric film

Life of this patent

Methods for post-etch deposition of a dielectric film

Life of this patent

Abstract

Claims27