Method for planarization
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYuh-Hwa Chang
Life of this patent
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Abstract
A method of planarizing a dielectric insulating layer including providing a substrate including forming a first dielectric insulating layer having a concave and convex portion on the substrate; forming an organic resinous layer on the first dielectric insulating layer and exposing the convex portion of the first dielectric insulating layer; isotropically etching the first dielectric insulating layer convex portion; removing the organic resinous layer; and, forming a second dielectric insulating layer on the first dielectric insulating layer.
Claims19
A method of planarizing a dielectric insulating layer comprising the steps of:
- providing a substrate;
- forming a first dielectric insulating layer having a concave and convex portion on the substrate;
- forming an organic resinous layer on the first dielectric insulating layer and exposing the convex portion of the first dielectric insulating layer;
- isotropically etching the first dielectric insulating layer convex portion;
- removing the organic resinous layer;
- and,
- forming a second dielectric insulating layer on the first dielectric insulating layer.
A method of planarizing a dielectric insulating layer comprising the steps of:
- providing a substrate;
- forming a first dielectric insulating layer having a concave and convex portion on the substrate;
- forming an organic resinous layer on the first dielectric insulating layer and exposing the convex portion of the first dielectric insulating layer;
- isotropically etching the first dielectric insulating layer convex portion;
- removing the organic resinous layer;
- forming a second dielectric insulating layer on the first dielectric insulating layer;
- carrying out an annealing process to cause at least the second dielectric insulating layer to reflow;
- and,
- etching back the second dielectric insulating layer to approach a surface planarity.
A method of planarizing a PMD layer comprising the steps of:
- providing a substrate;
- forming a first PMD layer on the substrate having a step height topography portion;
- forming and patterning a photoresist layer on the first PMD layer;
- etching back the step height topography portion to approach a surface planarity;
- forming an organic resinous layer on the first PMD layer;
- etching back the organic resinous layer to expose first PMD layer portions;
- isotropically etching the PMD layer portions;
- removing the organic resinous layer;
- forming a second PMD layer on the first PMD layer;
- carrying out an annealing process to cause the first and second PMD layers to reflow;
- and,
- etching back the second PMD layer to approach a surface planarity.
Dependencies are inferred from the claim text.