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US 2007/0167007 A1Published application
Methods for symmetric deposition of a metal layer in the fabrication of a semiconductor device
AssigneeMacronix International Co., Ltd.
InventorsSheng-Hui Hsieh, Ling-Wuu Yang, Chi-Tung Huang, Kuang-Chao Chen
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Abstract
A method for symmetric deposition of metal layer over a metal layer registration key comprises using MOCVD to form the metal layer. Once the symmetric metal layer is formed, a metal layer registration key can be accurately detected and the metal layer registration key overlay shift can be improved.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming a semiconductor structure;
- forming a metal layer registration key over the semiconductor structure;
- and
- using MOCVD to deposit a symmetric metal layer over the entire metal layer registration key.
1 more element
Dependencies are inferred from the claim text.