Method of making a semiconductor structure with a plating enhancement layer
AssigneeInternational Business Machines Corporation
InventorsShom Ponoth, Steven Chen, John Fitzsimmons, Terry Spooner
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Abstract
Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating enhancement layer (PEL) on the ILD, patterning the ILD and PEL, depositing a seed layer into the pattern formed by the ILD and PEL, and then plating copper on the seed layer. The PEL serves to decrease the resistance across the wafer so to facilitate the plating of the copper. The PEL preferably is an optically transparent and conductive layer.
Claims20
A method of making a semiconductor structure, the method comprising the steps of:
- obtaining a semiconductor wafer;
- forming an interlayer dielectric (ILD) layer on the semiconductor layer;
- forming a conductive plating enhancement layer (PEL) on the ILD;
- patterning the ILD and PEL;
- depositing a seed layer into the pattern formed by the ILD and PEL;
- and
- plating copper on the seed layer.
A method of making a semiconductor structure, the method comprising the steps of:
- obtaining a semiconductor wafer;
- forming an interlayer dielectric (ILD) layer on the semiconductor layer;
- blanket depositing a conductive plating enhancement layer (PEL) on the ILD;
- patterning the ILD and PEL so as to form features in the ILD and PEL;
- blanket depositing a seed layer onto the PEL and into the features formed in the ILD and PEL;
- and
- plating copper on the seed layer.
Dependencies are inferred from the claim text.