Semiconductor device and metal line fabrication method of the same
AssigneeDongbu HiTek Co., Ltd.
InventorJong Soon Lee
Life of this patent
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Abstract
Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a photoresist layer pattern on the conductive layer, performing primary dry etching for the conductive layer after employing the photoresist layer pattern as a mask, thereby forming a wiring pattern, partially removing the photoresist layer pattern through secondary dry etching, thereby forming a passivation layer on a surface of the wiring pattern, performing tertiary dry etching for the wiring pattern and a diffusion barrier after employing the photoresist layer pattern as a mask, thereby forming a metal wiring, and removing the photoresist layer pattern.
Claims20
A method comprising:
- forming a photoresist layer pattern over a conductive layer;
- performing primary dry etching on the conductive layer using the photoresist layer pattern as a mask to form a wiring pattern;
- partially removing the photoresist layer pattern through secondary dry etching, to form a passivation layer over a surface of the wiring pattern;
- and
- performing tertiary dry etching on the wiring pattern and a diffusion barrier using the photoresist layer pattern as a mask to form a metal wiring.
A method comprising:
- forming a conductive layer over a semiconductor substrate;
- forming a photoresist layer pattern over the conductive layer;
- forming a wiring pattern by performing isotropic etching using the photoresist layer pattern as a mask;
- forming a passivation layer over a surface of the wiring pattern by performing secondary dry etching;
- and
- forming a metal wiring by performing tertiary dry etching of the wiring pattern using the photoresist layer pattern as a mask.
A device comprising:
- a semiconductor substrate;
- and
- a wiring pattern formed over the semiconductor substrate,
- wherein the wiring pattern is formed by etching a metal layer in bulk through chemical dry etching, and a passivation layer is formed on the etched metal layer through plasma dry etching.
Dependencies are inferred from the claim text.