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US 2007/0166985 A1Published application
Fabrication Method of Thin Film and Metal Line in Semiconductor Device
OwnerHan Choon Leeinventor
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Abstract
A method for fabricating a thin layer in a semiconductor device is provided. The method can include: forming a preliminary layer, in which Ta and F are mixed, on a semiconductor substate by performing an Atomic Layer Deposition (ALD) method; forming a Ta layer by reacting the preliminary layer with B2H6; and forming a TaN layer by performing heat treatment for the Ta layer in N2 atmosphere.
Claims8
A method for fabricating a thin layer in a semiconductor device, comprising:
- forming a preliminary layer, in which Ta and F are mixed, on a semiconductor substrate by performing an Atomic Layer Deposition (ALD) method;
- forming a Ta layer by reacting the preliminary layer with B2H6;
- and
- forming a TaN layer by performing a heat treatment for the Ta layer in N2 atmosphere.
1 more element
A method for fabricating a metal wiring in a semiconductor device, comprising:
- forming an interlayer dielectric on a semiconductor substrate;
- forming a trench in the interlayer dielectric by performing a selective etching process;
- forming a first preliminary layer, in which Ta and F are mixed, on the semiconductor substrate including the trench by performing an Atomic Layer Deposition (ALD) method;
- forming a first Ta layer by reacting the first preliminary layer with B2H6;
- forming a TaN layer by performing a heat treatment for the first Ta layer in N2 atmosphere;
- forming a second preliminary layer, in which Ta and F are mixed, on the TaN layer by performing the ALD method;
- forming a second Ta layer by reacting the second preliminary layer with B2H6;
- and
- forming a metal wiring on the second Ta layer.
6 more elements
Dependencies are inferred from the claim text.