Method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsOsamu Arisumi, Masahiro Kiyotoshi
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Abstract
A method of manufacturing a semiconductor device, includes preparing a work piece having a trench on its main surface side, forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece, holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure is set in a range of 16 to 48 Torr, oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide as a main component, after holding the work piece in the first atmosphere, and removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.
Claims15
A method of manufacturing a semiconductor device, comprising:
- preparing a work piece having a trench on its main surface side;
- forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece;
- holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure is set in a range of 16 to 48 Torr;
- oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide as a main component, after holding the work piece in the first atmosphere;
- and
- removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.
Dependencies are inferred from the claim text.