Method for Forming Isolation Layer in Semiconductor Devices
AssigneeDongbu Electronics Co., Ltd.
InventorIn Kyu Chun
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Abstract
A method for forming an isolation layer for a semiconductor device is provided. The preferred method is capable of securing a gap fill margin during formation of an isolation layer. A device isolation layer formed according to a preferred method includes a trench formed in a device separation area of a semiconductor substrate; a thermal oxidation layer formed in a part of the trench; an oxidation silicon layer formed on the thermal oxidation layer; and an oxidation isolation layer formed on the oxidation silicon layer and filling the trench.
Claims6
An isolation layer for a semiconductor device comprising:
- a trench formed to a predetermined depth in a device isolation area of a semiconductor substrate;
- a thermal oxidation layer formed in the trench;
- an oxidation silicon layer formed on the thermal oxidation layer;
- and
- an oxidation isolation layer formed on the oxidation silicon layer, wherein the oxidation isolation layer fills the trench.
A method for forming an isolation layer for a semiconductor device comprising:
- sequentially forming an oxide layer and a nitride layer on a semiconductor substrate;
- forming a photosensitive film pattern for forming a trench on the nitride layer;
- forming a trench having a predetermined depth using the photosensitive film pattern as an etching mask;
- forming a thermal oxidation layer on the semiconductor substrate, including the trench;
- performing a first planarization process to remove the thermal oxidation layer formed on the nitride layer and to remove the nitride layer;
- forming an oxidation silicon layer on the semiconductor substrate including the oxide layer and a part of the trench;
- forming an oxidation isolation layer on the semiconductor substrate and filling the trench performing a second planarization process to remove a portion of the oxidation isolation layer to expose the oxidation silicon layer;
- and
- performing a wet etching process to remove a second portion of the oxidation isolation layer, a portion of the oxidation silicon layer and the oxide layer from a top surface of the semiconductor substrate.
Dependencies are inferred from the claim text.