Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
AssigneeIntel Corporation
InventorChanh Vo
Life of this patent
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Abstract
Embodiments of the present invention relate to the fabrication of a buried bi-layer insulator of silicon oxide and silicon nitride in a microelectronic substrate, and to the buried silicon oxide/silicon nitride bi-layer insulator itself. The buried silicon oxide/silicon nitride bi-layer insulator may be formed by implanting oxygen ions and nitrogen ions into the silicon-containing microelectronic substrate and then annealing the silicon-containing microelectronic substrate to form silicon oxide and silicon nitride layers therein.
Claims22
A method of fabricating a microelectronic structure, comprising:
- providing a microelectronic substrate;
- implanting oxygen ions into said microelectronic substrate to form a buried oxygen rich region within the microelectronic substrate;
- implanting nitrogen ions into said microelectronic substrate to form a buried nitrogen rich region within the microelectronic substrate;
- annealing said buried oxygen rich region to form a buried silicon oxide layer;
- and
- annealing said buried nitrogen rich region to form a buried silicon nitride layer.
A buried insulator, comprising:
- a buried silicon oxide layer within a microelectronic substrate;
- and
- a buried silicon nitride layer within said microelectronic substrate, wherein said silicon nitride layer is adjacent said silicon oxide layer.
A microelectronic structure formed by a method comprising:
- providing a microelectronic substrate;
- implanting oxygen ions into said microelectronic substrate to form a buried oxygen rich region within the microelectronic substrate;
- implanting nitrogen ions into said microelectronic substrate to form a buried nitrogen rich region within the microelectronic substrate;
- annealing said buried oxygen rich region to form a buried silicon oxide layer;
- and
- annealing said buried nitrogen rich region to form a buried silicon nitride layer.
Dependencies are inferred from the claim text.