Method of fabricating nonvolatile memory device

Abstract

Provided is a method of fabricating a nonvolatile memory device. According to the method, in a semiconductor substrate where a cell region and a logic region are defined, an isolation region and an active region are defined in each of the cell region and the logic region, and a low voltage region and a high voltage region are defined in the logic region, a shallow trench isolation region is formed in the isolation region. A first gate insulating layer and a first gate electrode are formed in one region of the cell region. Second and third gate insulating layers are formed in respective regions of the logic region. A semiconductor layer is deposited on an entire surface of the semiconductor substrate. The semiconductor layer is etched to form a second gate electrode to overlap a portion of the first gate electrode. An entire surface of the semiconductor substrate is coated with a bottom antireflection coating layer. The semiconductor layer is etched to form third and fourth gate electrodes in respective regions of the logic region.

Dependencies are inferred from the claim text.