Method for forming isolation layer of semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJong Taek Hwang
Life of this patent
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Abstract
A method for forming an isolation layer of a semiconductor device using a shallow trench isolation method is provided. The method includes: vertically etching a region of an insulating layer and a part of a semiconductor substrate corresponding thereto to form a trench; depositing an oxide layer on an entire surface of the semiconductor substrate to fill the trench; plasma-sputtering at least a surface part of the oxide layer; and removing the oxide layer using chemical mechanical polishing (CMP) so that the oxide layer remains only in the trench. The method may remove sharp parts of the oxide layer and reduce or prevent the occurrence of scratches during the CMP process.
Claims19
A method for forming an isolation structure of a semiconductor device comprising:
- vertically etching a region of an insulating layer and a part of an underlying semiconductor substrate corresponding to the region to form a trench;
- depositing an oxide layer on an entire surface of the semiconductor substrate to fill the trench;
- plasma-sputtering at least a part of a surface of the oxide layer;
- and
- removing the oxide layer by chemical mechanical polishing so that the oxide layer remains only in the trench.
A method for forming an isolation structure of a semiconductor device comprising:
- forming a first insulating layer on a semiconductor substrate;
- forming a second insulating layer on the first insulating layer;
- vertically etching regions of the first and second insulating layers and a part of the semiconductor substrate corresponding thereto to form a trench;
- depositing an oxide layer on an entire surface of the semiconductor substrate to fill the trench;
- plasma-sputtering a part of a surface of the oxide layer;
- and
- removing the oxide layer by chemical mechanical polishing so that the oxide layer remains only in the trench.
Dependencies are inferred from the claim text.