Flash memory device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsKwon Hong, Eun Shil Park, Min Sik Jang
Life of this patent
Estimating the term…
Abstract
A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO2/Al2O3/ZrO2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.
Claims21
A non-volatile memory device, comprising:
- a tunnel dielectric film formed over a semiconductor substrate;
- a floating gate formed over the tunnel dielectric film;
- a gate dielectric film formed over the floating gate, the gate dielectric film having a ZrO2-Al2O3-ZrO2 (ZAZ) structure, the ZAZ structuring including a first ZrO2 film, an Al2O3 film over the first ZrO2 film, and a second ZrO2 film over the Al2O3 film;
- and
- a control gate formed over the gate dielectric film.
A method of manufacturing a non-volatile memory device, the method comprising:
- forming a tunnel dielectric film over a a semiconductor substrate;
- forming a first conductive film over the tunnel dielectric film over to form a floating gate;
- forming a first oxide film over the first conductive film;
- forming a ZrO2-Al2O3-ZrO2 (ZAZ) film over the first oxide film;
- performing a thermal treatment process on the ZAZ film;
- forming a second oxide film over the ZAZ film;
- and
- forming a second conductive film over the second oxide film to form a control gate.
A method of manufacturing a non-volatile memory device, the method comprising:
- forming a tunnel dielectric film over a semiconductor substrate;
- forming a first conductive film over the tunnel dielectric film to form a floating gate;
- forming a ZrO2-Al2O3-ZrO2 (ZAZ) film over the first conductive film;
- and
- forming a second conductive film over the ZAZ film to form a control gate.
The method as claimed in claim 118, wherein the first conductive film is formed to a thickness of about 500 angstroms to about 2000 angstroms, wherein the first conductive film is formed by depositing polysilicon by means of a Chemical Vapor Deposition (CVD) method.
Dependencies are inferred from the claim text.