Method of fabricating a fin field effect transistor in a semiconductor device

A method for fabricating a fin field effect transistor comprising:

• sequentially depositing a first insulation film and a second insulation film over a semiconductor substrate;
• etching the first insulation film and the second insulation film using a first mask to form a trench on which a fin shaped conductor is to be formed;
• depositing a first conductor on the first and the second insulation films in which the trench is formed, thereby forming the fin shaped conductor;
• depositing a gate insulation film and a gate conductive layer over the first insulation film and the fin conductor;
• dry-etching the gate conductive layer using a second mask to form a gate conductor;
• depositing a spacer film, forming a spacer on a side wall of the gate conductor by an overall etching method, and then forming a source and drain by a source and drain ion implantation process;
• and
• performing a salicide process on exposed portions of the gate conductor and fin conductor to form a salicide film.