Spin transistor and manufacturing method thereof

A method of manufacturing a spin transistor, comprising:

• forming an insulation layer on a substrate;
• forming a first contact window in the insulation layer;
• forming a doping area in the substrate via the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• forming a second contact window in the insulation layer;
• forming a magnetoresistive film on the insulation layer;
• and
• forming a first metal region located at the first contact window, a second metal region located at the second contact window, and a third metal region located at the magnetoresistive film, wherein the second metal region contacts the magnetoresistive film.

A method of manufacturing a spin transistor, comprising:

• forming an insulation layer on a substrate;
• forming a first contact window in the insulation layer;
• forming a doping area in the substrate via the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• forming a second contact window in the insulation layer;
• forming a magnetoresistive film at a first position of the first contact window;
• and
• forming a first metal region, a second metal region, and a third metal region, wherein the first metal region is located on the magnetoresistive film, the second metal region is located at the second contact window, and the third metal region is located at a second position of the first contact window.

A method of manufacturing a spin transistor, comprising:

• forming an insulation layer on a substrate;
• forming a first contact window in the insulation layer;
• forming a doping area in the substrate via the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• forming a second contact window in the insulation layer;
• forming a magnetoresistive film at a first position of the second contact window;
• and
• forming a first metal region, a second metal region, and a third metal region, wherein the first metal region is located at the first contact window, the second metal region is located on the magnetoresistive film, and the third metal region is located at a second position of the second contact window.

A spin transistor, comprising:

• a substrate, having an insulation layer on the surface of the substrate, and the insulation layer having a first contact window and a second contact window;
• a doping area, formed in the substrate and located below the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• a first metal region, located at the first contact window;
• a second metal region, located at the second contact window;
• a magnetoresistive film, located on the insulation layer and contacts the first metal region;
• and
• a third metal region, located at the magnetoresistive film.

A spin transistor, comprising:

• a substrate, having an insulation layer on the surface of the substrate, and the insulation layer having a first contact window and a second contact window;
• a doping area, formed in the substrate and located below the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• a first metal region, located at the first contact window;
• a second metal region, located at the second contact window;
• a magnetoresistive film, located on the insulation layer and contacts the second metal region;
• and
• a third metal region, located at the magnetoresistive film.

A spin transistor, comprising:

• a substrate, having an insulation layer on the surface of the substrate, and the insulation layer having a first contact window and a second contact window;
• a doping area, formed in the substrate and located below the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• a magnetoresistive film, located at a first position of the first contact window;
• a first metal region, located at the magnetoresistive film;
• a second metal region, located at the second contact window;
• and
• a third metal region, located at a second position of the first contact window.

A spin transistor, comprising:

• a substrate, having an insulation layer on the surface of the substrate, and the insulation layer having a first contact window and a second contact window;
• a doping area, formed in the substrate and located below the first contact window, wherein the conductivity of the doping area is opposite to that of the substrate;
• a magnetoresistive film, located at a first position of the second contact window;
• a first metal region, located at the first contact window;
• a second metal region, located at the magnetoresistive film;
• and
• a third metal region, located at a second position of the second contact window.