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US 2007/0166650 A1Published application
Patterning methods and masks
OwnerYayi Weiinventor
Life of this patent
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Abstract
Masks for patterning material layers of semiconductor devices, methods of patterning and methods of manufacturing semiconductor devices, and lithography systems are disclosed. A lithography mask includes a pattern of alternating lines and spaces, wherein the lines and spaces comprise different widths. When the lithography mask is used to pattern a material layer of a semiconductor device, the pattern of the material layer comprises alternating lines and spaces having substantially the same width.
Claims25
A method of manufacturing a semiconductor device, the method comprising:
- providing a lithography mask, the lithography mask comprising a first pattern for a plurality of alternating lines and spaces, the lines of the first pattern comprising a first width, the spaces of the first pattern comprising a second width, the second width being different than the first width;
- providing a workpiece, the workpiece having a layer of photosensitive material disposed thereon;
- and
- patterning the layer of photosensitive material using the lithography mask, forming a second pattern for a plurality of alternating lines and spaces in the layer of photosensitive material, the lines of the second pattern and the spaces of the second pattern comprising a third width, the third width being different than the first width and the second width.
1 more element
A lithography mask, comprising:
- a first pattern for a plurality of alternating lines and spaces, the lines of the first pattern comprising a first width, the spaces of the first pattern comprising a second width, the second width being different than the first width, wherein when the lithography mask is used to pattern a layer of photosensitive material of a semiconductor device, a second pattern for a plurality of alternating lines and spaces is formed in the layer of photosensitive material, the lines of the second pattern and the spaces of the second pattern comprising a third width, the third width being different than the first width and the second width.
A lithography mask, comprising:
- a first pattern for a plurality of alternating lines and spaces, alternating spaces of the first pattern comprising a first thickness and a second thickness, the first thickness comprising a first width and the second thickness comprising a second width, the second width being different than the first width, the lines of the first pattern being defined by an intersection of the first thickness and the second thickness, wherein when the lithography mask is used to pattern a layer of photosensitive material of a semiconductor device, a second pattern for a plurality of alternating lines and spaces is formed in the layer of photosensitive material, the lines of the second pattern and the spaces of the second pattern comprising a third width, the third width being different than the first width and the second width.
A lithography system, comprising:
- a light source;
- a lithography mask comprising a first pattern for a plurality of alternating lines and spaces, the lines of the first pattern comprising a first width, the spaces of the first pattern comprising a second width, the second width being different than the first width;
- a lens system disposed between the light source and the lithography mask;
- and
- a support means for a semiconductor device, wherein when the lithography mask is used to pattern a layer of photosensitive material disposed on the semiconductor device, a second pattern for a plurality of alternating lines and spaces is formed in the layer of photosensitive material, the lines of the second pattern and the spaces of the second pattern comprising a third width, the third width being different than the first width and the second width.
2 more elements
A method of manufacturing a lithography mask, the method comprising:
- determining a layout for a plurality of alternating lines and spaces, each line of the layout comprising a first width, each space of the layout comprising a second width, the second width being different than the first width;
- fabricating a test mask including the layout;
- using the test mask to pattern a test workpiece;
- and
- if the test mask results in the formation of a plurality of alternating lines and spaces on the test workpiece having a third width, each line and each space comprising the third width, fabricating a mask including the layout.
2 more elements
Dependencies are inferred from the claim text.