Laminated resist used for immersion lithography
OwnerTakayuki Araki, Tsuneo Yamashita +1inventors
InventorsTakayuki Araki, Tsuneo Yamashita, Takuji Ishikawa
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Abstract
There is provided a laminated resist which is transparent in the case of exposure light of not less than 193 nm and can form a fine pattern having an intended form without defects with good reproducibility. The laminated resist has a photoresist layer (L1) and a transparent protective layer (L2) on a substrate and the protective layer (L2) is formed on an outermost surface of the laminated resist. The protective layer (L2) has an absorption coefficient of not more than 1.0 μm−1 in the case of ultraviolet light of a wavelength of not less than 193 nm, a dissolution rate in a developing solution of not less than 50 nm/sec and a dissolution rate in pure water of not more than 10 nm/min.
Claims18
A laminated resist for immersion lithography using ultraviolet light of a wavelength of not less than 193 nm for exposing, in which a photoresist layer (L1) and a protective layer (L2) are formed on a substrate, and the protective layer (L2) forms the outermost surface of the laminated resist and is characterized in that:
- (1) an absorption coefficient in ultraviolet light of a wavelength of not less than 193 nm is not more than 1.0 μm−1,
- (2) a dissolution rate in a developing solution is not less than 50 nm/sec, and
- (3) a dissolution rate in pure water is not more than 10 nm/min.
A laminated resist for immersion lithography using ultraviolet light of a wavelength of not less than 193 nm for exposing, in which a photoresist layer (L3) is formed on a substrate as an outermost surface of the laminated resist and is characterized by containing (A2) a fluorine-containing polymer having protective group Y2 which can be converted to an alkali soluble group by dissociation with an acid and (B2) a photoacid generator.
Dependencies are inferred from the claim text.