Structure and method for a magnetic memory device with proximity writing
AssigneeMacronix International Co., Ltd.
InventorsChiaHua Ho, Kuang Hsieh
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Abstract
An MRAM device comprises a plurality of MRAM structures, each MRAM structure comprising a magnetoresistive memory cell in close proximity to a high permeability conductive line and a single transistor configured to access the magnetoresistive memory cell for both read and write operations. The high permeability conductive line acts a current path for both read and write operations, thereby reducing the number of metal bit lines.
Claims25
An MRAM device, comprising:
- a high permeability conductive element;
- a magnetoresistive memory cell separated from the high permeability conductive element by a proximity conductor;
- a word line transistor comprising a gate, a source region, and a drain region, the source region coupled with one end of the high permeability conductive element;
- a word line coupled with the gate of the word line transistor;
- a first bit line couple with the drain region of the word line transistor and perpendicular to the word-line;
- and
- a second bit line coupled with the magnetoresistive memory cell and parallel with the word line.
A method for fabricating a MRAM device comprising a plurality of word line transistor and a plurality of magnetoresistive memory cells, the method comprising:
- selecting an orientation axis;
- forming a plurality of gate structures parallel with the orientation axis;
- patterning a contact pattern for source and drain contacts, the pattern orientated perpendicular to the orientation axis;
- forming the source and drain contacts using the contact pattern;
- forming the source and drain regions;
- and
- forming a first bit line structure perpendicular to the orientation access.
Dependencies are inferred from the claim text.