System and method for I/O ESD protection with floating and/or biased polysilicon regions

A system for electrostatic discharge protection, the system comprising:

• a plurality of transistors, the plurality of transistors including a plurality of gate regions, a plurality of source regions, and a plurality of drain regions, the plurality of source regions and the plurality of drain regions being located within an active area in a substrate, the active area begin adjacent to at least an isolation region in the substrate;
• a first plurality of polysilicon regions, the first plurality of polysilicon regions being separated from the substrate by a first plurality of dielectric layers;
• wherein
• at least a part of each of the first plurality of polysilicon regions is on the active area;
• the first plurality of polysilicon regions are not in direct contact with each other.

A system for electrostatic discharge protection, the system comprising:

• a plurality of transistors, the plurality of transistors including a plurality of gate regions, a plurality of source regions, and a plurality of drain regions, the plurality of source regions and the plurality of drain regions being located within an active area in a substrate, the active area begin adjacent to at least an isolation region in the substrate;
• a plurality of polysilicon regions, the plurality of polysilicon regions being separated from the substrate by a plurality of dielectric layers;
• wherein:
• the plurality of polysilicon regions is on one of the plurality of drain regions or one of the plurality of source regions;
• the plurality of polysilicon regions is not in direct contact with each other;
• each of the plurality of polysilicon region is not in direct contact with anyone of the plurality of gate regions.