Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi HAMAMOTO
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Abstract
A semiconductor device of one embodiment of the present invention includes a substrate; isolation layers, each of which is formed in a trench formed on the substrate and has an insulating film and a conductive layer; a semiconductor layer of a first conductivity type for storing signal charges, formed between the isolation layers and isolated from the conductive layers by the insulating films; a semiconductor layer of a second conductivity type, formed under the semiconductor layer of the first conductivity type; and a transistor having a gate insulator film formed on the semiconductor layer of the first conductivity type and a gate electrode formed on the gate insulator film.
Claims20
A semiconductor device, comprising:
- a substrate;
- isolation layers, each of which is formed in a trench formed on the substrate and has an insulating film and a conductive layer;
- a semiconductor layer of a first conductivity type for storing signal charges, formed between the isolation layers and isolated from the conductive layers by the insulating films;
- a semiconductor layer of a second conductivity type, formed under the semiconductor layer of the first conductivity type;
- and
- a transistor having a gate insulator film formed on the semiconductor layer of the first conductivity type and a gate electrode formed on the gate insulator film.
A method for manufacturing a semiconductor device, comprising:
- forming trenches for isolation, on a substrate;
- forming isolation layers, each of which has an insulating film and a conductive layer, in the trenches;
- forming a semiconductor layer of a first conductivity type for storing signal charges between the isolation layers so that the semiconductor layer of the first conductivity type is isolated from the conductive layers by the insulating films;
- forming a semiconductor layer of a second conductivity type under the semiconductor layer of the first conductivity type;
- and
- forming a transistor having a gate insulator film formed on the semiconductor layer of the first conductivity type and a gate electrode formed on the gate insulator film.
Dependencies are inferred from the claim text.