Back to results
US 2007/0164313 A1Published application
Gallium nitride high electron mobility transistor structure
OwnerWilliam Hoke, John Moscainventors
Life of this patent
Estimating the term…
Abstract
A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
Claims1
A semiconductor structure, comprising:
- a silicon substrate;
- an AlN on the silicon substrate;
- and
- wherein portions of the AlN layer in contact with the silicon substrate are substantially free of silicon;
- a graded AlGaN layer on the AlN layer;
- a GaN layer on the AlGaN layer;
- and
- including an AlGaN layer on the GaN layer.
5 more elements
Dependencies are inferred from the claim text.