Electrostatic discharge element and diode having horizontal current paths, and method of manufacturing the same

A method of manufacturing an electrostatic discharge element, the method comprising:

• forming a first well region in a substrate;
• forming a second well region in the substrate;
• forming an intermediate layer on the first and the second well regions;
• forming P-type ion-implanted regions in the first and the second well regions;
• and
• forming N-type ion-implanted regions in the first and the second well regions.

A diode comprising:

• a well region formed in a substrate;
• a P-type ion-implanted region formed in the well region;
• a N-type ion-implanted region formed in the well region and spaced from the P-type ion-implanted region by a predetermined distance;
• and
• an intermediate layer formed on a portion of the well region corresponding to the predetermined distance between the P-type ion-implanted region and the N-type ion-implanted region.

A diode comprising:

• a well region formed in a substrate;
• a first ion-implanted region formed in the well region;
• a second ion-implanted region formed in the well region and spaced from the first ion-implanted region by a first distance in one direction;
• a third ion-implanted region formed in the well region and spaced from the first ion-implanted region by a second distance in another direction opposite to the one direction;
• a first insulating layer formed on a portion of the well region corresponding to the first distance;
• a first conductive layer formed on the first insulating layer;
• a second insulating layer formed on a portion of the well region corresponding to the second distance;
• and
• a second conductive layer formed on the second insulating layer.

A diode comprising:

• a well region formed in a substrate;
• a first ion-implanted region formed in the well region;
• an insulating layer formed in the well region and configured to surround the first ion-implanted region in three directions;
• a conductive layer formed on the insulating layer;
• and
• a second ion-implanted region formed in the well region and outside the insulating layer.

A diode comprising:

• a well region formed in a substrate;
• a first ion-implanted region formed in the well region;
• an insulating layer formed in the well region and configured to surround the first ion-implanted region in four directions;
• a conductive layer formed on the insulating layer;
• and
• a second ion-implanted region formed in the well region and outside the insulating layer.