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US 2007/0164235 A1Published application
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsJae Chang Jung, Chang Moon Lim
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Abstract
A method for forming a fine photoresist pattern of a semiconductor device, the method comprising the steps of forming a chemically amplified photoresist film over an underlying layer formed over a semiconductor substrate to form a first photoresist pattern; exposing the first photoresist pattern without exposure mask to bake the resulting structure; and flowing the photoresist of the first photoresist pattern to obtain a second photoresist pattern.
Claims4
A method for forming a fine photoresist pattern of a semiconductor device, the method comprising:
- forming a chemically amplified photoresist film over a layer formed over a semiconductor substrate to form a first photoresist pattern;
- exposing the first photoresist pattern without exposure mask to source light;
- baking the resulting structure;
- and
- performing a photoresist flow process onto the first photoresist pattern to obtain a second photoresist pattern.
2 more elements
Dependencies are inferred from the claim text.