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US 2007/0163489 A1Published application
Method of forming a layer having a single crystalline structure
OwnerYong-Hoon Son, Jong-Wook Leeinventors
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Abstract
A method of forming a layer, including forming an insulation layer having an opening on a single crystalline substrate, the opening partially exposing an upper face of the substrate, forming a first seed layer in the opening, converting an upper portion of the first seed layer to a first amorphous layer, converting the first amorphous layer to a second seed layer, forming a second amorphous layer on the second seed layer, and converting the second amorphous layer to a single crystalline layer.
Claims20
A method of forming a layer, comprising:
- forming an insulation layer having an opening on a single crystalline substrate, the opening partially exposing an upper face of the substrate;
- forming a first seed layer in the opening;
- converting an upper portion of the first seed layer into a first amorphous layer;
- converting the first amorphous layer into a second seed layer;
- forming a second amorphous layer on the second seed layer;
- and
- converting the second amorphous layer into a single crystalline layer.
4 more elements
Dependencies are inferred from the claim text.