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US 2006/0242488 A1Published application
Flash memory device with reduced access time
AssigneeHynix Semiconductor Inc.
InventorByoung Sung You
Life of this patent
Estimating the term…
Abstract
A flash memory device with a reduced access time. The flash memory device executes an error detection and correction operation while encoding or decoding transmission and reception signals with a host apparatus. The flash memory device utilizes a simplified design algorithm and reduces an access time.
Claims15
A flash memory device, comprising:
- a Finite State Machine (FSM) check unit, which detects and corrects error of an input data signal, a command signal, a write address signal and a read address signal, while decoding any one of the signals, to output one of a decoded input data signal, a decoded command signal, a decoded write address signal and a decoded read address signal, and detects and corrects error of a read data signal, state information and chip information, while encoding one of the read data signal, the state information and the chip information, to output one of an encoded read data signal, encoded state information and encoded chip information;
- and
- a flash memory core, which stores the decoded input data signal in response to the decoded command signal and the decoded write address signal, outputs the read data signal in response to the decoded command signal and the decoded read address signal, and outputs the state information and the chip information in response to a control signal.
Dependencies are inferred from the claim text.