Wafer curvature estimation, monitoring, and compensation
AssigneeTokyo Electron Limited
InventorsSanjeev Kaushal, Kenji Sugishima, Pradeep Pandey
Life of this patent
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Abstract
A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.
Claims24
A method of determining wafer curvature in real-time in a system for processing a wafer on a hotplate, the method comprising:
- establishing a first temperature profile for a hotplate surface, wherein the hotplate is divided into a plurality of temperature control zones;
- positioning a wafer at a first height above the hotplate surface;
- determining a second temperature profile for the hotplate surface based upon the wafer at the first height;
- and
- determining the wafer curvature by using the second temperature profile.
Dependencies are inferred from the claim text.