Processing method for protection of backside of a wafer
AssigneeMacronix International Co., Ltd.
InventorsKuo-Pang Tseng, Lung-An Lee, Yin-Fu Huang, Chih-Chia Hsu, Cheng-Hsiung Lee
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Abstract
A temporal protecting layer is employed to a wafer backside for use of micro-electro-mechanical systems (MEMS). The formation of the temporal protecting layer prevents the wafer backside from scratch in process of transferring system for IC manufacturers. In concerning with low cost and easily forming and removing, an oxide layer is used as the temporal protecting layer. The throughput and yield rate for the wafer are improved by the temporal protecting layer.
Claims9
A processing method for protection of a backside of a wafer in process of a transferring system;
- comprising:
- providing said wafer having a topside and said backside opposite thereto, wherein said wafer comprises a semiconductor device region near said topside;
- forming a first barrier layer on said backside;
- and
- forming a first protective layer on and adjacent to said barrier layer of said backside.
A processing method for a backside of a silicon wafer for use of micro-electro-mechanical systems (MEMS), comprising:
- providing said silicon wafer having a topside and said backside opposite thereto, wherein said silicon wafer comprises a semiconductor device region near said topside;
- depositing two silicon nitride layers on said backside and said topside, respectively;
- and
- depositing an oxide layer on and adjacent to said silicon nitride layer of said backside, whereby protecting said silicon nitride layer of said backside from scratch in process of a transferring system.
Dependencies are inferred from the claim text.