Method of performing a surface treatment respectively on the via and the trench in a dual damascene process
OwnerQiang Guoinventor
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Abstract
The present invention provides a method of performing a surface treatment respectively on the via and the trench in a dual damascene process by the plasma having the inclined angle. The residual and/or the metal surface oxide on the bottom of the via are removed in the via and the trench etching process, and the surface treatment is performed on the surface of the trench, thereby preventing the poor electrical and increasing the adhesive force between the surface of the trench and the barrier metal layer, resulting in solving the disadvantage which the surface treatment can not be respectively performed and the trench according to the prior art.
Claims10
A method of performing a surface treatment respectively on a via and a
- trenches in a dual damascene process, comprising:
- providing a semiconductor substrate having integrated circuits, forming a metal layer, an intermetal dielectric layer thereon sequentially, and wherein a via and a trench are sequentially formed on the intermetal dielectric layer;
- performing a first plasma surface treatment on a bottom of the via;
- and
- performing a second plasma surface treatment on a surface of the trench, and a forward direction of an ion beam is at an angle to the normal of the bottom of the via while performing the second surface treatment.
Dependencies are inferred from the claim text.