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US 2006/0234475 A1Published application
Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHong Lee
Life of this patent
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Abstract
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a dummy contact hole is formed in a scribe lane by employing a direct polyimide etching (‘DPE’) process reducing the two steps of a masking process to one step and a passivation layer filling up the dummy contact hole is formed to mechanically support the stress generated in a subsequent annealing process, thereby preventing a crack as a particle source in a packaging process from occurring.
Claims5
A method for manufacturing a semiconductor device comprising:
- forming a metal line on a semiconductor substrate having a lower structure;
- forming at least one dummy contact hole on the semiconductor substrate including the metal line in a scribe lane;
- forming a passivation layer filling up the at least one dummy contact hole on an entire surface of the semiconductor substrate;
- and
- performing an annealing process on the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.