MIM capacitor and method of fabricating same

A method of forming a structure, comprising:

• providing a semiconductor substrate;
• forming a dielectric layer on a top surface of said semiconductor substrate, said dielectric layer having a top surface and a bottom surface;
• forming a trench in said dielectric layer;
• forming a conformal conductive liner on all sidewalls and extending along a bottom of said trench;
• filling said trench with a first core conductor;
• removing all or a portion of said first core conductor from said trench;
• forming an insulating layer on a top surface of said conformal conductive liner on regions of said conformal conductive liner not covered by any first core conductor not removed from said trench by said removing;
• and
• filling spaces in said trench not filled by said conformal conductive liner, said any remaining first core conductor and said insulating layer with a second core conductor.

A method of forming a structure, comprising:

• providing a semiconductor substrate;
• forming a dielectric layer on a top surface of said semiconductor substrate, said dielectric layer having a top surface and a bottom surface;
• forming a first trench and a second trench in said dielectric layer;
• forming a conformal conductive liner on all sidewalls and extending along bottoms of said first and said second trenches;
• filling said first and said second trenches with a first core conductor;
• removing all or a portion of said first core conductor from said second trench and not from said first trench;
• forming an insulating layer on a top surface of said conformal conductive liner on regions of said conformal conductive liner not covered by any first core conductor not removed from said second trench by said removing;
• and
• filling spaces in said second trench not filled by said conformal conductive liner, said any remaining first core conductor and said insulating layer with a second core conductor.

A method of forming a structure, comprising:

• providing a semiconductor substrate;
• forming a dielectric layer on a top surface of said semiconductor substrate, said dielectric layer having a top surface and a bottom surface;
• forming a first trench in said dielectric layer, said first trench extending from a top surface to a bottom surface of said dielectric layer;
• forming a second trench in said dielectric layer, said second trench overlapping said first trench, said second trench extending from a top surface into said dielectric layer a distance less than a distance between said top surface and said bottom surface of said dielectric layer;
• forming a conformal conductive liner on all sidewalls and extending along bottoms of said first and said second trenches;
• filling said first and said second trenches with a first core conductor;
• removing all or a portion of said first core conductor from said first and said second trenches;
• forming an insulating layer on a top surface of said conformal conductive liner on regions of said conformal conductive liner not covered by any first core conductor not removed from said first and said second trenches by said removing;
• and
• filling spaces in said first and said second trenches not filled by said conformal conductive liner, said any remaining first core conductor and said insulating layer with a second core conductor.