US 2006/0234435 A1 · Semiconductor device having one-time programmable ROM and method of fabricating the same

Abstract

A semiconductor device with a one-time programmable (OTP) ROM disposed over a semiconductor substrate including a memory cell area and a peripheral circuit area includes a MOS transistor and an OTP ROM capacitor. The MOS transistor has a floating gate electrode and is disposed at the memory cell area. The OTP ROM capacitor has a lower electrode, an upper intermetal dielectric, and an upper electrode which are stacked in the order named. The OTP ROM capacitor is disposed on the MOS transistor, and the floating gate electrode and the lower electrode are connected by a floating gate plug to constitute an electrically insulated conductive structure. The upper intermetal dielectric is made of at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride and may be disposed on an entire surface of the semiconductor substrate. A capacitor formed together with the OTP ROM is disposed at the peripheral circuit region.

Claims16

Dependent claims

A method of fabricating a semiconductor device with an OTP ROM, comprising:

forming a floating gate electrode over a semiconductor substrate;
forming a lower electrode electrically connected to the floating gate electrode;
forming an upper intermetal dielectric over an entire surface of the semiconductor substrate including the lower electrode;
and
forming an upper electrode over the upper intermetal dielectric.

2 more elements

A method of fabricating a semiconductor device with an OTP ROM disposed at a semiconductor substrate including a memory cell area and a peripheral circuit area, the method comprising:

forming a floating gate electrode over the memory cell area of the semiconductor substrate;
simultaneously forming a lower electrode electrically connected to the floating gate electrode over the memory cell area and a lower capacitor electrode disposed over the peripheral circuit area;
forming a dielectric film over an entire surface of the semiconductor substrate including the lower electrode and the lower capacitor electrode;
and
simultaneously forming an upper electrode and an upper capacitor electrode over the dielectric film, the upper electrode crossing over the lower electrode and the upper capacitor electrode crossing over the lower capacitor electrode.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device having one-time programmable ROM and method of fabricating the same

Life of this patent

Semiconductor device having one-time programmable ROM and method of fabricating the same

Life of this patent

Abstract

Claims16