Method for manufacturing perovskite type oxide layer, method for manufacturing ferroelectric memory and method for manufacturing surface acoustic wave element

A method for manufacturing a ferroelectric memory, comprising the steps of:

• forming, above a substrate, a lower electrode;
• forming, above the lower electrode, a first oxide layer composed of perovskite type oxide;
• forming, above the first oxide layer, a second oxide layer composed of at least one of a perovskite type oxide layer crystallized at a temperature lower than a crystallization temperature of the first oxide layer and a pyrochlore layer having elements identical with those of the perovskite type oxide;
• forming an upper electrode above the second oxide layer;
• and
• conducting a heat treatment.

A method for manufacturing a surface acoustic wave element, comprising the steps of:

• forming, above a substrate, a first oxide layer composed of perovskite type oxide;
• forming, above the first oxide layer, a second oxide layer composed of at least one of a perovskite type oxide layer crystallized at a temperature lower than a crystallization temperature of the first oxide layer and a pyrochlore layer having elements identical with elements of the perovskite type oxide;
• forming an electrode above the second oxide layer;
• and
• conducting a heat treatment.