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US 2006/0234169 A1Published application
Photo mask
AssigneeHynix Semiconductor Inc.
InventorsSang Bae, Dong Park
Life of this patent
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Abstract
A photo mask comprises a H-type light-shield pattern. In an exposure process, a photo mask is used to form a STAR (Step Asymmetry Recess) gate region, thereby stably securing a storage node contact region and improving a refresh characteristic of a semiconductor device.
Claims3
A photo mask defining an etching mask pattern for formation of a STAR gate region comprising a bit line contact region and a predetermined portion of the gate region adjacent to the bit line contact region, the photo mask comprising a H-type light-shield pattern,
- wherein the H-type light-shield pattern comprises:
- a first rectangular light-shield pattern covering at least the bit line contact region in an active region of the STAR gate region;
- and
- second light-shield patterns on a device isolation region adjacent to two opposing sides of the first light shield pattern, the second light-shield patterns disposed along a major axis of the active region.
1 more element
Dependencies are inferred from the claim text.