Method of forming pattern using fine pitch hard mask
AssigneeSamsung Electronics Co., Ltd.
InventorsJi-young Lee, Sang-gyun Woo, Joon-soo Park
Life of this patent
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Abstract
A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask.
Claims20
A method of forming a fine pattern of a substrate, comprising:
- forming a first hard mask pattern comprising a plurality of first line patterns formed on an etch target layer in a first direction with a first pitch;
- forming a first layer on sidewalls and an upper surface of the first hard mask pattern, such that the first layer includes a top surface where a recess is formed between two adjacent first line patterns;
- forming a second hard mask pattern comprising a plurality of second line patterns each extending in the first direction within the recess;
- performing an anisotropic etching process on the first layer using the first line patterns and the second line patterns as an etch mask, thereby exposing the etch target layer disposed between the first line patterns and the second line patterns;
- and,
- performing another anisotropic etching process on the etch target layer using the first hard mask pattern and the second hard mask pattern as an etch mask.
Dependencies are inferred from the claim text.