Single trench repair method with etched quartz for attenuated phase shifting mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorCheng-Ming Lin
Life of this patent
Estimating the term…
Abstract
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
Claims19
1-30. (canceled)
A repaired attenuated phase shifter mask, comprising:
- an attenuated phase shifter mask, the attenuated phase shifter mask comprising a transparent substrate over which a patterned layer of phase shifter material has been created;
- a defective area of the phase shifter material having been identified;
- the phase shifter material having been removed from the defective area;
- opaque material having been deposited on the defective area of the attenuated phase shifter mask;
- and
- a single trench having been etched into the transparent substrate aligned with the defective area to provide a phase shift angle, the trench location and dimensions comprising an exposure pattern.
A repaired attenuated phase shifter mask, comprising:
- an attenuated phase shifter mask, the attenuated phase shifter mask comprising a transparent substrate over which a patterned layer of phase shifter material has been created;
- a defective area of the phase shifter material having been identified;
- the phase shifter material having been removed from the defective area;
- and
- a double trench having been etched into the transparent substrate of the attenuated phase shifter mask aligned with the defective area to provide a phase shift angle, wherein the double trench is located at an edge of an exposure pattern, wherein the double trench further has dimensions being smaller than dimensions of the exposure pattern.
A repaired attenuated phase shifter mask, comprising:
- an attenuated phase shifter mask, the attenuated phase shifter mask comprising a transparent substrate over which a patterned layer of phase shifter material has been created;
- a defective area of the phase shifter material having been identified;
- the phase shifter material having been removed from the defective area;
- opaque material having been deposited on the defective area;
- and
- a double trench having been etched into the transparent substrate of the attenuated phase shifter mask aligned with the defective area to provide a phase shift angle, wherein the double trench is located at an edge of an exposure pattern, wherein the double trench further has dimensions being smaller than dimensions of the exposure pattern.
Dependencies are inferred from the claim text.