Hard mask arrangement
OwnerRodger Fehlhaber, Helmut Tewsinventors
Life of this patent
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Abstract
An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.
Claims28
A method for the production of a hard mask, comprising
- applying a photoresist layer on a substrate;
- patterning the photoresist layer;
- applying a hard mask layer to the patterned photoresist layer using an atomic layer epitaxy technique;
- removing a portion of the hard mask layer, a corresponding portion of the patterned photoresist layer being uncovered;
- and
- removing the uncovered patterned photoresist layer.
A hard mask arrangement, comprising:
- a substrate;
- a patterned photoresist layer applied on the substrate;
- and
- a hard mask layer applied on the photoresist layer, a portion of the hard mask being removed to expose a corresponding portion of the patterned photoresist layer,
- where the exposed patterned photoresist layer is configured to be removed.
A hard mask, comprising
- an atomic-layer-epitaxy applied hard mask layer being to a patterned photoresist layer on a substrate, at least a portion of the atomic-layer-epitaxy applied hard mask layer being removed exposing at least a portion of the patterned photoresist layer.
Dependencies are inferred from the claim text.