ESD protection circuit with SCR structure for semiconductor device
AssigneeNEC Electronics Corporation
InventorYasuyuki Morishita
Life of this patent
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Abstract
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type semiconductor region coupled with the first N-type semiconductor region and connected to a ground terminal; a second N-type semiconductor region coupled with the second P-type semiconductor region and connected to a ground terminal; and a trigger circuit configured to draw a trigger current from the first N-type semiconductor region when a surge is applied to the pad. The trigger circuit is connected to the first N-type semiconductor region through a resistive element.
Claims13
An ESD protection structure comprising:
- a first P-type semiconductor region connected to a pad;
- a first N-type semiconductor region coupled with said first P-type semiconductor region;
- a second P-type semiconductor region coupled with said first N-type semiconductor region and connected to a ground terminal;
- a second N-type semiconductor region coupled with said second P-type semiconductor region and connected to a ground terminal;
- and
- a trigger circuit configured to draw a trigger current from said first N-type semiconductor region when a surge is applied to said pad,
- wherein said trigger circuit is connected to said first N-type semiconductor region through a resistive element.
Dependencies are inferred from the claim text.