Structure for measuring gate misalignment and measuring method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-gun Ko, Ja-hum Ku
Life of this patent
Estimating the term…
Abstract
Provided are an improved structure for measuring gate misalignment and a measuring method thereof. The structure includes an active region and a device isolation region, a first gate group including a plurality of gates extending in one direction at one side of the active region, widths of the gates being the same with one another and lengths of the respective gates overlapping with the active region being different from one another, and a second gate group including a plurality of gates extending in one direction at the other side of the active region, widths of the gates being the same as one another and lengths of the respective gates overlapping with the active region being different from one another.
Claims14
A gate misalignment measuring structure comprising:
- a semiconductor substrate including an active region and a device isolation region;
- a first gate group including a plurality of gates extending in one direction at one side of the active region, widths of the gates being the same with one another and lengths of the respective gates overlapping with the active region being different from one another;
- and
- a second gate group including a plurality of gates extending in one direction at the other side of the active region, widths of the gates being the same as one another and lengths of the respective gates overlapping with the active region being different from one another,
- wherein the lengths of the gates of the first gate group overlapping with the active region are substantially the same with the lengths of the corresponding gates of the second gate group.
A method for measuring gate misalignment comprising:
- providing a gate misalignment measuring structure comprising a semiconductor substrate including an active region and a device isolation region, a first gate group including a plurality of gates extending in one direction at one side of the active region, widths of the gates being the same with one another and lengths of the respective gates overlapping with the active region being different from one another, and a second gate group including a plurality of gates extending in one direction at the other side of the active region, widths of the gates being the same with one another and lengths of the respective gates overlapping with the active region being different from one another, wherein the lengths of the gates of the first gate group overlapping with the active region are substantially the same with the lengths of the corresponding gates of the second gate group;
- measuring gate leakage current levels of the plurality of gates of the first and second gate group;
- generating a first straight line which graphs length of the gates overlapping with the active region when the gates are normally aligned versus gate leakage current levels of the respective gates of either the first or second gate group, and generating a second straight line which graphs length of the gates overlapping with the active region when the gates are normally aligned versus the average gate leakage current levels of the gates of the first gate group and the gates of the second gate group corresponding to the respective gates of the first gate group;
- and
- determining the misalignment distance by calculating a horizontal offset between the first and second straight lines.
Dependencies are inferred from the claim text.