Semiconductor device and method for manufacturing same
AssigneeNEC Electronics Corporation
InventorsIwao Shirakawa, Nobutaka Nagai, Ryo Kubota
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Abstract
The semiconductor device 100 includes: a semiconductor substrate 102; a capacitor 116 formed on the semiconductor substrate 102, including a structure composed of a lower electrode 118, a capacitive film 120 and an upper electrode 122, which are stacked in this sequence; an extracting unit 124 of the upper electrode 122 of the capacitor 116; and a contact 108c formed below the extracting unit 124, and providing an electrical coupling between the extracting unit 124 and an underlying interconnect such as an impurity-diffused region 103 and the like.
Claims15
A semiconductor device, comprising:
- a semiconductor substrate;
- a capacitor formed on said semiconductor substrate, said capacitor having a stacked structure including a lower electrode, a capacitive film and an upper electrode, that are stacked in this sequence;
- an extracting unit of said upper electrode of said capacitor;
- and
- a first contact formed under said extracting unit, and providing an electrical coupling between said extracting unit and a first underlying interconnect.
A method for manufacturing a semiconductor device, including:
- forming an insulating film on an underlying interconnect that is formed on a surface of or above a semiconductor substrate;
- forming a contact in said insulating film, said contact being electrically coupled to said underlying interconnect;
- forming a multiple-layered structure in a region on said insulating film which is different from the region where said contact is formed, said multiple-layered structure being composed of a lower electrode and a capacitive film, which are stacked in this sequence;
- and
- forming an upper electrode material on said insulating film, said upper electrode material covering said capacitive film and being coupled to said contact.
Dependencies are inferred from the claim text.