Semiconductor device for high voltage IC

A semiconductor device comprising:

• a plurality of transistors, which are insulated and separated each other, wherein the transistors are connected in series between a ground potential and a predetermined potential, wherein one of the transistors disposed on an utmost ground potential side is defined as a first step transistor, and another transistor disposed on an utmost predetermined potential side is defined as a Nth step transistor, and wherein N is a predetermined natural number equal to or larger than two;
• an input terminal provided by a gate terminal of the first step transistor;
• a plurality of resistors, which are connected in series between the ground potential and the predetermined potential, wherein one of the resistors disposed on the utmost ground potential side is defined as a first step resistor, and another resistor disposed on the utmost predetermined potential side is defined as a Nth step resistor;
• an output terminal provided by a predetermined potential side terminal of the Nth step transistor;
• and
• a plurality of first capacitors, wherein
• a gate terminal of each transistor other than the first step transistor is sequentially connected between neighboring two resistors, and
• each first capacitor is connected in parallel to each transistor.

A semiconductor device comprising:

• a plurality of transistors, which are insulated and separated each other, wherein the transistors are connected in series between a ground potential and a predetermined potential, wherein one of the transistors disposed on an utmost ground potential side is defined as a first step transistor, and another transistor disposed on an utmost predetermined potential side is defined as a Nth step transistor, and wherein N is a predetermined natural number equal to or larger than two;
• an input terminal provided by a gate terminal of the first step transistor;
• a plurality of parallel RC elements, which are connected in series between the ground potential and the predetermined potential, wherein each parallel RC element includes a resistor and a second capacitor, which are connected in parallel each other, and wherein one of the parallel RC elements disposed on the utmost ground potential side is defined as a first step parallel RC element, and another parallel RC element disposed on the utmost predetermined potential side is defined as a Nth step parallel RC element;
• and
• an output terminal provided by a predetermined potential side terminal of the Nth step transistor, wherein
• a gate terminal of each transistor other than the first step transistor is sequentially connected between neighboring two parallel RC elements.