Ballistic semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsNobuyuki Otsuka, Koichi Mizuno, Shigeo Yoshii, Asamira Suzuki
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Abstract
A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.
Claims16
A ballistic semiconductor device comprising:
- a n-type emitter layer;
- a base layer made of n-type InGaN;
- a n-type collector layer;
- an emitter barrier layer interposed between the emitter layer and the base layer and having a band gap larger than a band gap of the base layer;
- and
- a collector barrier layer interposed between the base layer and the collector layer and having a band gap larger than the band gap of the base layer, wherein
- the ballistic semiconductor device operates at 10 GHz or higher.
Dependencies are inferred from the claim text.