Heterojunction bipolar transistor
AssigneeNippon Telegraph and Telephone Corporation
InventorsYasuhiro Oda, Kenji Kurishima, Haruki Yokoyama, Takashi Kobayashi
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Abstract
An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs(0.51)Sb(0.49) base layer 4 heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter layer 7 doped with Si, an n-type InP cap layer 8 heavily doped with Si, and an n-type In(0.53)Ga(0.47)As contact layer 9 heavily doped with Si are stacked on a substrate 1.
Claims14
A heterostructure bipolar transistor characterized in that constituent devices of a compound semiconductor forming a base layer contain at least Ga, As, and Sb, and constituent devices of a compound semiconductor forming an emitter layer contain at least In, Al, and P.
Dependencies are inferred from the claim text.