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US 2006/0231528 A1Published application
Methods of forming semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsWerner Juengling, Steven McDonald, Kunal Parekh
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Abstract
The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.
Claims8
1-47. (canceled)
A method of forming a semiconductor construction, comprising:
- providing a semiconductor substrate having fuses within a fuse region, having a sacrificial cover across the fuse region and over the fuses, and having an access node peripheral to the fuse region;
- the access node and sacrificial cover being electrically conductive and being the same in composition as one another;
- forming a patterned electrically insulative material over the substrate, the patterned material having a first opening extending therethrough to said access node, and having a second opening extending therethrough to the sacrificial cover;
- forming an electrically conductive material over the patterned material and within the first and second openings;
- patterning the electrically conductive material into one or more interconnects;
- and
- during said patterning, removing at least some of the sacrificial cover to form an opening extending entirely through the sacrificial cover.
4 more elements
Dependencies are inferred from the claim text.