Film-forming method and apparatus using plasma CVD

A chemical vapor deposition method that generates a plasma by using a radio frequency electric field produced in a process chamber, and forms a thin film on a substrate, which is placed on a susceptor and is heated through the susceptor by a heating element arranged in the susceptor, said method comprising the steps of:

• transferring the substrate into the process chamber and raising substrate support pins arranged in the susceptor, thereby supporting the substrate on the substrate support pins;
• supplying a gas into the process chamber, which is being evacuated, and heating the susceptor by the heating element, thereby performing first preheating of the substrate while the substrate is being supported on the substrate support pins;
• stopping supplying the gas into the process chamber while the process chamber is being evacuated, and lowering the substrate support pins to place the substrate on the susceptor;
• supplying a gas into the process chamber while the substrate is placed on the susceptor, thereby performing second preheating of the substrate;
• generating a plasma in the process chamber;
• and
• supplying a film-forming gas into the process chamber to form a thin film on the substrate.

A plasma chemical vapor deposition apparatus comprising:

• a process chamber that accommodates a substrate to be processed;
• a susceptor that supports the substrate thereon, the susceptor having a heating element therein;
• a gas supply mechanism that supplies at least a film-forming gas into the process chamber;
• and
• plasma generating means for producing a radio-frequency electric field in said process chamber to generate a plasma;
• wherein at least a surface of a peripheral portion of a substrate mounting region of the susceptor is formed to be flat, whereby the surface of the peripheral portion is in surface contact with a portion of a surface of the substrate opposing the peripheral portion when the substrate is placed on said susceptor.

A storage medium storing a computer program for controlling operations of a chemical vapor deposition apparatus including a process chamber, and a susceptor arranged in the process chamber and having vertically-movable substrate support pins and a heating element, wherein, when a control computer connected to the chemical vapor deposition apparatus executes the control program, the control computer controls the chemical vapor deposition apparatus to perform a film-forming method, said film-forming method comprising the steps of:

• supplying a gas into the process chamber, which is being evacuated, and heating the susceptor by the heating element, thereby performing first preheating of the substrate while the substrate being placed on the substrate support pins in their raised position;
• stopping supplying the gas into the process chamber while continuing evacuating the process chamber, and lowering the substrate support pins to place the substrate on the susceptor;
• supplying a gas into the process chamber while the substrate is placed on the susceptor, thereby performing second preheating of the substrate;
• generating a plasma in the process chamber;
• and
• supplying a film-forming gas into the process chamber to form a thin film on the substrate.