Atomic layer deposition methods and chemical vapor deposition methods
AssigneeMicron Technology, Inc.
InventorBrian Vaartstra
Life of this patent
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Abstract
The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.
Claims16
An atomic layer deposition method comprising:
- flowing a first non thermally activated precursor into a reaction chamber and depositing at least a fragment of the first non-activated precursor onto a substrate to form a first layer;
- and
- exposing the first layer to microwave radiation;
- and
- after the exposing, flowing a second non thermally-activated precursor into the reaction chamber and depositing at least a fragment of the second non-activated precursor onto the first layer to form a second layer.
An atomic layer deposition method comprising:
- sequential deposition of a first precursor material and a second precursor material to form a layer, each of the first and second precursor materials being thermally unstable and each of the first and second precursor materials being introduced into a reaction chamber and deposited on a substrate at low thermal energy;
- and
- after depositing either the first precursor material or both the first and second precursor materials, thermally inducing reactions to occur in the layer.
An atomic layer deposition method comprising:
- providing a thermally unstable first precursor into a reactor and chemisorbing the first precursor onto a substrate without thermally breaking down or thermally reacting the first precursor;
- purging the reactor;
- after purging the reactor, exposing the chemisorbed precursor to an increased thermal energy;
- after the exposing, decreasing the thermal energy;
- and
- providing a thermally unstable second precursor into the reactor and chemisorbing the second precursor over the substrate without thermally breaking down or thermally reacting the second precursor.
Dependencies are inferred from the claim text.