Modification of pixelated photolithography masks based on electric fields
AssigneeIntel Corporation
InventorsBin Hu, Vivek Singh, Victor Bashurin, Yuri Bogunenko
Life of this patent
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Abstract
Faster synthesis of photolithography mask modifications is described. In one embodiment, the invention includes synthesizing a first binary photolithography mask, developing perturbations to an estimated electric field generated by the first mask in use, and synthesizing a second binary photolithography mask by applying the perturbations to the first mask.
Claims20
A method comprising:
- synthesizing a first binary photolithography mask;
- developing perturbations to an estimated electric field generated by the first mask in use;
- and
- synthesizing a second binary photolithography mask by applying the perturbations to the first mask.
An article comprising a machine-readable medium comprising instructions, that when executed by the machine cause the machine to perform operations comprising:
- synthesizing a first binary photolithography mask;
- developing perturbations to an estimated electric field generated by the first mask in use;
- and
- synthesizing a second binary photolithography mask by applying the perturbations to the first mask.
A microelectronic device having a layer formed by photolithography using a mask, the mask being synthesized by:
- synthesizing a first binary photolithography mask;
- developing perturbations to an estimated electric field generated by the first mask in use;
- and
- synthesizing a second binary photolithography mask by applying the perturbations to the first mask.
An apparatus comprising:
- a memory;
- a bus coupled to the memory;
- and
- a microprocessor coupled to the bus, the microprocessor having a layer formed by photolithography using a mask, the mask being synthesized by:
- synthesizing a first binary photolithography mask;
- developing perturbations to an estimated electric field generated by the first mask in use;
- and
- synthesizing a second binary photolithography mask by applying the perturbations to the first mask.
Dependencies are inferred from the claim text.