Method and system for refurbishing a metal carbonyl precursor

A method of processing one or more substrates using a metal carbonyl precursor, the method comprising:

• (a) providing a first system in fluid communication with a second system, the first and second systems each coupled to a process chamber and each configured to evaporate a metal carbonyl precursor for delivery thereof to the process chamber;
• (b) providing un-reacted metal carbonyl precursor to the first system;
• (c) performing a first processing of the one or more substrates by evaporating the un-reacted metal carbonyl precursor in the first system and delivering the vapor of the un-reacted metal carbonyl precursor to the process chamber;
• (d) halting the first processing when the first system contains the un-reacted metal carbonyl precursor in combination with an undesired level of partially reacted metal carbonyl precursor;
• (e) flowing a CO-containing gas through the first system to the second system to transfer the un-reacted metal carbonyl precursor to the second system;
• (f) performing a second processing of the one or more substrates by evaporating the un-reacted metal carbonyl precursor in the second system and delivering the vapor of the un-reacted metal carbonyl precursor to the process chamber;
• (g) halting the second processing when the second system contains the un-reacted metal carbonyl precursor in combination with an undesired level of partially reacted metal carbonyl precursor;
• (h) flowing the CO-containing gas through the second system to the first system to transfer the un-reacted metal carbonyl precursor to the first system;
• (i) repeating steps (c) through (h) a desired number of times;
• during step (f), removing the partially reacted metal carbonyl precursor from the first system;
• and
• during step (c), removing the partially reacted metal carbonyl precursor from the second system.

A precursor refurbishing system, comprising:

• a metal precursor vaporization system containing a metal carbonyl precursor comprising un-reacted and partially reacted metal carbonyl precursor;
• means for heating the metal carbonyl precursor in the metal precursor vaporization system to form un-reacted metal carbonyl precursor vapor;
• means for flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system;
• and
• means for collecting the transferred metal carbonyl precursor in the precursor collection system, wherein the precursor collection system is maintained at a lower temperature than the metal precursor vaporization system.

A precursor refurbishing system, comprising a metal precursor vaporization system configured to vaporize an un-reacted metal carbonyl precursor;

• a precursor collection system in fluid communication with the metal precursor vaporization system;
• a gas source coupled to the metal precursor vaporization system, wherein the gas source is configured for flowing a CO-containing gas through the metal precursor vaporization system to the precursor collection system;
• a pumping system configured for evacuating the metal precursor vaporization system and precursor collection system;
• a temperature control system configured for heating the metal precursor vaporization system to vaporize the un-reacted metal carbonyl precursor and for maintaining the precursor collection system at a temperature lower than the metal precursor vaporization system;
• and
• a controller configured for controlling the refurbishing system during transfer of the un-reacted metal carbonyl precursor to the precursor collection system.