Etch with photoresist mask
AssigneeLam Research Corporation
InventorsJisoo Kim, Sangheon Lee, Binet Worsham, Robert Charatan, S.M. Sadjadi
Life of this patent
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Abstract
A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
Claims18
A method for etching a dielectric layer over a substrate, comprising:
- forming a photoresist mask over the dielectric layer;
- placing the substrate in a plasma processing chamber;
- providing an etchant gas comprising NF3 into the plasma chamber;
- forming a plasma from the NF3 gas;
- and
- etching the dielectric layer through the photoresist mask with the plasma from the NF3 gas.
A method for etching a dielectric layer over a substrate, comprising:
- forming a photoresist mask no more than 400 nm thick over the dielectric layer;
- placing the substrate in a plasma processing chamber;
- providing an etchant gas consisting essentially of NF3 and a diluent into the plasma chamber;
- forming a plasma from the NF3 gas;
- and
- etching the dielectric layer through the photoresist mask with the plasma from the NF3 gas.
An apparatus for forming a features in an etch layer, wherein the layer is supported by a substrate and wherein the etch layer is covered by a photoresist mask, comprising:
- a plasma processing chamber, comprising:
- a chamber wall forming a plasma processing chamber enclosure;
- a substrate support for supporting a substrate within the plasma processing chamber enclosure;
- a pressure regulator for regulating the pressure in the plasma processing chamber enclosure;
- at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma;
- a gas inlet for providing gas into the plasma processing chamber enclosure;
- and
- a gas outlet for exhausting gas from the plasma processing chamber enclosure;
- a gas source comprising an NF3 source in fluid connection with the gas inlet,
- a controller controllably connected to the gas source and the at least one electrode, comprising:
- at least one processor;
- and
- computer readable media, comprising:
- computer readable code for providing NF3 gas from the NF3 source into the plasma processing chamber;
- computer readable code for generating a plasma from the NF3 gas;
- and
- computer readable code for providing plasma conditions to cause the etching of an etch layer with the plasma from the NF3 gas.
Dependencies are inferred from the claim text.